Ghandhi, Sorab K.
VLSI Fabrication Principles : Silicon and Gallium Arsenide - 2nd - New Delhi Wiley India Pvt. Ltd. India 2016,c1994 - 834
Fully updated with the latest technologies, this edition covers the fundamental principles underlying fabrication processes for semiconductor devices along with integrated circuits made from silicon and gallium arsenide. Stresses fabrication criteria for such circuits as CMOS, bipolar, MOS, FET, etc. These diverse technologies are introduced separately and then consolidated into complete circuits.
TABLE OF CONTENTS
· Material Properties
· Phase Diagrams and Solid Solubility
· Crystal Growth and Doping
· Diffusion
· Epitaxy
· Ion Implantation
· Native Films
· Deposited Films
· Etching and Cleaning
· Lithographic Processes
· Device and Circuit Fabrication
9788126517909
Allied Informatics, Jaipur
Electronics
621.381 71 / GHA
VLSI Fabrication Principles : Silicon and Gallium Arsenide - 2nd - New Delhi Wiley India Pvt. Ltd. India 2016,c1994 - 834
Fully updated with the latest technologies, this edition covers the fundamental principles underlying fabrication processes for semiconductor devices along with integrated circuits made from silicon and gallium arsenide. Stresses fabrication criteria for such circuits as CMOS, bipolar, MOS, FET, etc. These diverse technologies are introduced separately and then consolidated into complete circuits.
TABLE OF CONTENTS
· Material Properties
· Phase Diagrams and Solid Solubility
· Crystal Growth and Doping
· Diffusion
· Epitaxy
· Ion Implantation
· Native Films
· Deposited Films
· Etching and Cleaning
· Lithographic Processes
· Device and Circuit Fabrication
9788126517909
Allied Informatics, Jaipur
Electronics
621.381 71 / GHA