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Semiconductor Device Fundamentals : with Computer-based exercises and Homework Problems

By: Pierret, Robert F.
Material type: materialTypeLabelBookPublisher: New Delhi Pearson Education 2006,c1996Description: 792.ISBN: 9788177589771.Subject(s): ElectronicsDDC classification: 621.38152 Summary: Salient Features The computer-based exercises and homework problems permit the replacement of plug-and-chug boredom with more challenging realistic problems Other special features include tables that summarize the required reading, difficulty level, and suggested weighting of end-of-chapter problems, “crib-sheet” –like equation summaries in the critical beginning chapters, and direct reproductions of device data and computer-generated plots.
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Item type Current location Collection Call number Status Date due Barcode
Books Books BSDU Knowledge Resource Center, Jaipur
381.381 52 PIE (Browse shelf) Available 001393
Books Books BSDU Knowledge Resource Center, Jaipur
381.381 52 PIE (Browse shelf) Available 001394
Books Books BSDU Knowledge Resource Center, Jaipur
Not for Loan 381.381 52 PIE (Browse shelf) Not For Loan 001395
Books Books BSDU Knowledge Resource Center, Jaipur
381.381 52 PIE (Browse shelf) Available 001396
Books Books BSDU Knowledge Resource Center, Jaipur
381.381 52 PIE (Browse shelf) Available 001397

Contents
PART I: SEMICONDUCTOR FUNDAMENTALS.
Semiconductors -- A General Introduction.
Carrier Modeling.
Carrier Action.
Basics of Device Fabrication.
R1. Part I Supplement and Review.
PART II: A. PN JUNCTION DIODES.
PN Junction Electrostatics.
PN Junction Diode -- I-V Characteristics.
PN Junction Diode -- Small-Signal Admittance.
PN Junction Diode -- Transient Response.
Optoelectronic Diodes.
PART III: BJTS AND OTHER JUNCTION DEVICES.
BJT Fundamentals.
BJT Static Characteristics.
BJT Dynamic Response Modeling.
PNPN Devices.
MS Contacts and Schottky Diodes.
R2. Part II Supplement and Review.
PART IV: FIELD EFFECT DEVICES.
Field Effect Introduction -- the J-FET and MESFET.
MOS Fundamentals.
MOSFETs -- The Essentials.
Nonideal MOS.
Modern FET Structures.
R3. Part III Supplement and Review.

Salient Features
The computer-based exercises and homework problems permit the replacement of plug-and-chug boredom with more challenging realistic problems
Other special features include tables that summarize the required reading, difficulty level, and suggested weighting of end-of-chapter problems, “crib-sheet” –like equation summaries in the critical beginning chapters, and direct reproductions of device data and computer-generated plots.

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