Ghandhi, Sorab K. <br/><br/>
VLSI Fabrication Principles : Silicon and Gallium Arsenide 

 - 2nd 
 - New Delhi  Wiley India Pvt. Ltd. India  2016,c1994 
 - 834 
<br/><br/> Fully updated with the latest technologies, this edition covers the fundamental principles underlying fabrication processes for semiconductor devices along with integrated circuits made from silicon and gallium arsenide. Stresses fabrication criteria for such circuits as CMOS, bipolar, MOS, FET, etc. These diverse technologies are introduced separately and then consolidated into complete circuits.<br/><br/>  
<br/><br/>TABLE OF CONTENTS<br/>·	Material Properties<br/><br/>·	Phase Diagrams and Solid Solubility<br/><br/>·	Crystal Growth and Doping<br/><br/>·	Diffusion<br/><br/>·	Epitaxy<br/><br/>·	Ion Implantation<br/><br/>·	Native Films<br/><br/>·	Deposited Films<br/><br/>·	Etching and Cleaning<br/><br/>·	Lithographic Processes<br/><br/>·	Device and Circuit Fabrication<br/><br/><br/><br/>  
<br/><br/><label>ISBN: </label>9788126517909 
<br/><br/><label>Publisher. No.: </label> Allied Informatics, Jaipur 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Electronics
<br/><br/><label>Dewey Class. No.: </label>621.381 71  / GHA